aot10n65/AOTF10N65 650v,10a n-channel mosfet general description product summary v ds i d (atv gs =10v) 10a r ds(on) (atv gs =10v) <1 w 100%uistested100%r g tested forhalogenfreeadd"l"suffixtopartnumber: aot10n65l&AOTF10N65l symbol v ds v gs i dm i ar e ar e as peakdioderecoverydv/dt dv/dt t j ,t stg t l symbol r q ja r q cs r q jc *draincurrentlimitedbymaximumjunctiontemperature. 0.5 units c/w 65 0.5 65 2.5 junctionandstoragetemperaturerangemaximumjunctiontoambient a,d powerdissipation b p d t c =25c thermal characteristics 300 55to150 2 0.4 avalanchecurrent c 173 singlepulsedavalancheenergy g 347 3.4 repetitiveavalancheenergy c v 30 gatesourcevoltage t c =100c a 36 pulseddraincurrent c continuousdraincurrent t c =25c 10 theaot10n65&AOTF10N65havebeenfabricated usinganadvancedhighvoltagemosfetprocessthatis designedtodeliverhighlevelsofperformanceand robustnessinpopularacdcapplications. byprovidinglowr ds(on) ,c iss andc rss alongwith guaranteedavalanchecapabilitythesepartscanbeadoptedquicklyintonewandexistingofflinepowersupply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted aot10n65 AOTF10N65 750v@150 drainsourcevoltage 650 i d 5 50 250 6.2 10* 6.2* maximumcasetosink a maximumjunctiontocase mj c/w c/w derateabove25 o c parameter aot10n65 AOTF10N65 maximumleadtemperatureforsoldering purpose,1/8"fromcasefor5seconds a w w/ o c c mj v/ns c topview to-220f to-220 g d s g d s g ds rev3:march2011 www.aosmd.com page1of6
aot10n65/AOTF10N65 symbol min typ max units 650 750 bv dss /?tj 0.75 v/ o c 1 10 i gss gatebodyleakagecurrent 100 n a v gs(th) gatethresholdvoltage 3 4 4.5 v r ds(on) 0.77 1 w g fs 13 s v sd 0.73 1 v i s maximumbodydiodecontinuouscurrent 10 a i sm 36 a c iss 1095 1369 1645 pf c oss 95 118 145 pf c rss 8 10 12 pf r g 1.7 3.5 5.5 w q g 22 27.7 33 nc q gs 6 7.4 9 nc q gd 9 11.3 14 nc t d(on) 30 ns t r 61 ns t d(off) 74 ns t f 53 ns t rr 255 320 385 ns q rr 4.8 6 7.2 c thisproducthasbeendesignedandqualifiedfortheconsumermarket.applicationsorusesascriticalcomponentsinlifesupportdevicesorsystemsarenotauthorized.aosdoesnotassumeanyliabilityarising outofsuchapplicationsorusesofitsproducts.aosreservestherighttoimproveproductdesign, functionsandreliabilitywithoutnotice. m a v ds =0v,v gs =30v v drainsourcebreakdownvoltage i d =250a,v gs =0v,t j =25c i d =250a,v gs =0v,t j =150c zerogatevoltagedraincurrent id=250a,vgs=0v bv dss bodydiodereverserecoverycharge i f =10a,di/dt=100a/ m s,v ds =100v maximumbodydiodepulsedcurrentinputcapacitance outputcapacitance turnondelaytime dynamic parameters turnonrisetimeturnoffdelaytime v gs =10v,v ds =325v,i d =10a, r g =25 w gateresistance v gs =0v,v ds =0v,f=1mhz turnofffalltime totalgatecharge v gs =10v,v ds =520v,i d =10a gatesourcechargegatedraincharge i dss zerogatevoltagedraincurrent v ds =650v,v gs =0v diodeforwardvoltage v ds =5v, i d =250 m a v ds =520v,t j =125c electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions bodydiodereverserecoverytime staticdrainsourceonresistance v gs =10v,i d =5a reversetransfercapacitance i f =10a,di/dt=100a/ m s,v ds =100v v gs =0v,v ds =25v,f=1mhz switching parameters i s =1a,v gs =0v v ds =40v,i d =5a forwardtransconductance a.thevalueofr q ja ismeasuredwiththedeviceinastillairenvironmentwitht a =25c. b.thepowerdissipationp d isbasedont j(max) =150c,usingjunctiontocasethermalresistance,andismoreusefulinsettingtheupperdissipation limitforcaseswhereadditionalheatsinkingisused.c.repetitiverating,pulsewidthlimitedbyjunctiontemperaturet j(max) =150c,ratingsarebasedonlowfrequencyanddutycyclestokeepinitialt j =25c.d.ther q ja isthesumofthethermalimpedancefromjunctiontocaser q jc andcasetoambient. e.thestaticcharacteristicsinfigures1to6areobtainedusing<300 m spulses,dutycycle0.5%max. f.thesecurvesarebasedonthejunctiontocasethermalimpedancewhichismeasuredwiththedevicemountedtoalargeheatsink,assumingamaximumjunctiontemperatureoft j(max) =150c.thesoacurveprovidesasinglepulserating. g.l=60mh,i as =3.4a,v dd =150v,r g =25 ? ,startingt j =25c rev3:march2011 www.aosmd.com page2of6
aot10n65/AOTF10N65 typical electrical and thermal characteristics 2.2 1.0e05 1.0e04 1.0e03 1.0e02 1.0e01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0 3 6 9 12 15 18 0 5 10 15 20 25 30 v ds (volts) fig 1: on-region characteristics i d (a) v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 v gs (volts) figure 2: transfer characteristics i d (a) 55c v ds =40v 25c 125c 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 4 8 12 16 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( w ww w ) v gs =10v 0 0.5 1 1.5 2 2.5 3 100 50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =5a 0.8 0.9 1 1.1 1.2 100 50 0 50 100 150 200 t j ( o c) figure 5: break down vs. junction temperature bv dss (normalized) rev3:march2011 www.aosmd.com page3of6
aot10n65/AOTF10N65 typical electrical and thermal characteristics 0 3 6 9 12 15 0 5 10 15 20 25 30 35 40 q g (nc) figure 7: gate-charge characteristics v gs (volts) v ds =520v i d =10a 1 10 100 1000 10000 0.1 1 10 100 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area for aot10n65 (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 m s 0.01 0.1 1 10 100 1 10 100 1000 v ds (volts) i d (amps) figure 10: maximum forward biased safe operating area for AOTF10N65 (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t c =25c 100 m s 1s 0 2 4 6 8 10 12 0 25 50 75 100 125 150 t case (c) figure 11: current de-rating (note b) current rating i d (a) rev3:march2011 www.aosmd.com page4of6
aot10n65/AOTF10N65 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 12: normalized maximum transient thermal impedance for aot10n65 (note f) z q qq q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.5c/w indescendingorderd=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse t on t p d singlepulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 13: normalized maximum transient thermal impedance for AOTF10N65 (note f) z q qq q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.5c/w indescendingorderd=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse singlepulse t on t p d rev3:march2011 www.aosmd.com page5of6
aot10n65/AOTF10N65 + vdc ig vds dut + vdc vgs vgs 10v qg qgs qgd charge gatechargetestcircuit&waveform + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istiveswitchingtestcircuit&waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut + vdc l vgs vds id vgs bv i unclampedinductiveswitching(uis)testcircuit& waveforms ig vgs + vdc dut l vds vgs vds isd isd dioderecoverytes tcircuit&waveforms vds vds+ i f ar dss 2 e=1/2li di/dt i rm rr vdd vdd q=idt t rr ar ar rev3:march2011 www.aosmd.com page6of6
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